This paper investigates the performance of InP Gunn devices at high millimeter- and submillimeter-wave frequencies through computer simulations. The objective is to estimate the highest frequency at which InP Gunn devices can realistically be used as oscillators. The simulation tool uses the ensemble Monte Carlo method to model the Gunn device while the harmonic balance technique is employed to describe the device-circuit interaction. Thermal eects are taken into account by coupling a heat ow equation to the Monte Carlo algorithm. Results based on this model showed good agreement with available experimental data both for fundamental and second harmonic InP Gunn oscillators. This agreement establishes an acceptable condence level on the appl...
Simulations of GaAsmillimeter wave T.E.O.'s indicate the possibility of fundamental accumulation lay...
The oscillation frequency tuning range of waveguide Gunn oscillator and its stability depend sensiti...
AbstractPlanar Indium Gallium Arsenide (In0.57Ga0.47As) Gunn diode was fabricated on a semi-insulati...
Recent advances in design and technology signifi- cantly improved the performance of low-noise InP ...
The purpose of this study is to investigate the capabilities of GaAs and InP Gunn devices at high fr...
The length of the transit region of a Gunn diode determines the natural frequency at which it operat...
The variability and large magnitude of the frequency/temperature coefficient of Gunn oscillators has...
The length of the transit region of a Gunn diode determines the natural frequency at which it operat...
This paper reports on the development of InP Gunn sources for operation in the D-band (110-170 GHz)....
In this work, we report on Monte Carlo simulations to study the capability to generate Gunn oscilla...
Subject of investigation: oscillators employing Gunn diodes for millimetric wave band. Purpose of th...
94 GHz stable sources using 2nd harmonic GaAs Gunn diodes and injection locking at 47 GHz by a high ...
Presented in this paper in the design and development of Millimetre-wave Gunn Oscillators for the 33...
The power capabilities of three different two-terminal devices, GaAs IMPATT diodes, InP Gunn devices...
High field transport in wide bandgap semiconductors like GaN is of great technological importance. T...
Simulations of GaAsmillimeter wave T.E.O.'s indicate the possibility of fundamental accumulation lay...
The oscillation frequency tuning range of waveguide Gunn oscillator and its stability depend sensiti...
AbstractPlanar Indium Gallium Arsenide (In0.57Ga0.47As) Gunn diode was fabricated on a semi-insulati...
Recent advances in design and technology signifi- cantly improved the performance of low-noise InP ...
The purpose of this study is to investigate the capabilities of GaAs and InP Gunn devices at high fr...
The length of the transit region of a Gunn diode determines the natural frequency at which it operat...
The variability and large magnitude of the frequency/temperature coefficient of Gunn oscillators has...
The length of the transit region of a Gunn diode determines the natural frequency at which it operat...
This paper reports on the development of InP Gunn sources for operation in the D-band (110-170 GHz)....
In this work, we report on Monte Carlo simulations to study the capability to generate Gunn oscilla...
Subject of investigation: oscillators employing Gunn diodes for millimetric wave band. Purpose of th...
94 GHz stable sources using 2nd harmonic GaAs Gunn diodes and injection locking at 47 GHz by a high ...
Presented in this paper in the design and development of Millimetre-wave Gunn Oscillators for the 33...
The power capabilities of three different two-terminal devices, GaAs IMPATT diodes, InP Gunn devices...
High field transport in wide bandgap semiconductors like GaN is of great technological importance. T...
Simulations of GaAsmillimeter wave T.E.O.'s indicate the possibility of fundamental accumulation lay...
The oscillation frequency tuning range of waveguide Gunn oscillator and its stability depend sensiti...
AbstractPlanar Indium Gallium Arsenide (In0.57Ga0.47As) Gunn diode was fabricated on a semi-insulati...